Download IPP020N06N Datasheet PDF
IPP020N06N page 2
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Datasheet Summary

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP020N06N,IIPP020N06N - Features - Static drain-source on-resistance: RDS(on) ≤2.0mΩ - Enhancement mode - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - reliable device for use in a wide variety of applications -...