IPP041N04N - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤4.1mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPP041N04N
Manufacturer	INCHANGE
File Size	241.33 KB
Description	N-Channel MOSFET
Datasheet	IPP041N04N Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching for SMPS ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 94 Tj Max.

Published: Oct 8, 2020 |