Datasheet Summary
isc N-Channel MOSFET Transistor IPP041N12N3，IIPP041N12N3
- Features
- Static drain-source on-resistance:
RDS(on) ≤4.1mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Ideal for high-frequency switching and synchronous rectification
-...
