Datasheet Details
| Part number | IPP057N06N3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.95 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPP057N06N3-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor IPP057N06N3， IIPP057N06N3 ·.
| Part number | IPP057N06N3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.95 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPP057N06N3-INCHANGE.pdf |
|
|
|
·Ideal for high frequency switching ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 115 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.3 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP057N06N3， IIPP057N06N3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPP057N06N3 | Power-Transistor | Infineon |
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IPP057N06N3G | Power-Transistor | Infineon |
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