IPP060N06N - N-Channel MOSFET

Datasheet Summary

Features

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Static drain-source on-resistance: RDS(on) ≤6.0mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPP060N06N
Manufacturer	INCHANGE
File Size	241.36 KB
Description	N-Channel MOSFET
Datasheet	IPP060N06N Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP060N06N，IIPP060N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 83 Tj Max.

Published: Oct 2, 2020 |