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IPP062NE7N3 - N-Channel MOSFET

Datasheet Summary

Features

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  • Static drain-source on-resistance: RDS(on) ≤6.2mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPP062NE7N3
Manufacturer INCHANGE
File Size 241.37 KB
Description N-Channel MOSFET
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP062NE7N3，IIPP062NE7N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 136 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
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