Datasheet4U Logo Datasheet4U.com

IPP120N20NFD - N-Channel MOSFET

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤12mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP120N20NFD MOSFET Infineon
IPP120N04S3-02 Power-Transistor Infineon
IPP120N04S4-01 Power-Transistor Infineon
IPP120N04S4-02 Power-Transistor Infineon
IPP120N06NG Power-Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP126N10N3 N-Channel MOSFET
IPP12CN10L N-Channel MOSFET
IPP12CN10N N-Channel MOSFET
IPP100N08N3 N-Channel MOSFET
IPP110N20N3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPP120N20NFD，IIPP120N20NFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for hard commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 84 IDM Drain Current-Single Pulsed 336 PD Total Dissipation @TC=25℃ 300 Tj Max.