IPP200N15N3 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤20mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPP200N15N3
Manufacturer	INCHANGE
File Size	241.50 KB
Description	N-Channel MOSFET
Datasheet	IPP200N15N3 Datasheet
Additional preview pages of the IPP200N15N3 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high frequency switching and sync. Rec. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 150 Tj Max.

Published: Oct 10, 2020 |