IPP200N25N3 - N-Channel MOSFET

Features

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Static drain-source on-resistance: RDS(on) ≤20mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPP200N25N3
Manufacturer	INCHANGE
File Size	240.60 KB
Description	N-Channel MOSFET
Datasheet	IPP200N25N3 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPP200N25N3，IIPP200N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 256 PD Total Dissipation @TC=25℃ 300 Tj Max.

Published: Oct 10, 2020 |