IPP50R190CE
Key Features
- Static drain-source on-resistance: RDS(on) ≤0.19Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Fast switching
- Part: IPP50R190CE
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 240.70 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IPP50R199CP | Infineon | Power Transistor |