IPP60R099C7 datasheet by Inchange Semiconductor.
| Part number | IPP60R099C7 |
|---|---|
| Datasheet | IPP60R099C7-INCHANGE.pdf |
| File Size | 240.59 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET |
|
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·bines the benefits of a fast switching SJ MOSFET with excellent ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 22 IDM Drain Current-Single Pulsed 83 PD Total Dissipation @TC=25℃ 110 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1.2mA RDS(on) Drain-Source On-Resistance VGS=10V;.
View IPP60R099C7 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IPP60R099C7 | MOSFET | Infineon |
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