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IPP60R099CP - N-Channel MOSFET

Datasheet Summary

Description

Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 93 PD Total Dissipation @TC=25℃ 255 T

Features

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  • Static drain-source on-resistance: RDS(on) ≤0.099Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPP60R099CP
Manufacturer INCHANGE
File Size 241.15 KB
Description N-Channel MOSFET
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isc N-Channel MOSFET Transistor IPP60R099CP，IIPP60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 93 PD Total Dissipation @TC=25℃ 255 Tj Max.
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