IPP60R099P6 Description
·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 37.9 IDM Drain Current-Single Pulsed 109 PD Total Dissipation @TC=25℃ 278 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1.21mA RDS(on) Drain-Source On-Resistance VGS=10V;.
IPP60R099P6 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching super junction MOS while not