IPP60R125C6 Description
·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.96mA RDS(on) Drain-Source On-Resistance VGS=10V;.
IPP60R125C6 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching super junction MOS