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IPP60R125CP

Manufacturer: Inchange Semiconductor

IPP60R125CP datasheet by Inchange Semiconductor.

IPP60R125CP datasheet preview

IPP60R125CP Datasheet Details

Part number IPP60R125CP
Datasheet IPP60R125CP-INCHANGE.pdf
File Size 240.69 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
IPP60R125CP page 2

IPP60R125CP Overview

·Ultra low gate charge ·High peak current capability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 25 IDM Drain Current-Single Pulsed 82 PD Total Dissipation @TC=25℃ 208 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1.1mA RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP60R125CP Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Ultra low gate charge -High peak current capability

IPP60R125CP from other manufacturers

View IPP60R125CP datasheet index

Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo IPP60R125CP Power Transistor Infineon Technologies
Infineon Technologies Logo IPP60R125C6 MOSFET Infineon Technologies
Infineon Logo IPP60R125P6 MOSFET Infineon
Inchange Semiconductor logo - Manufacturer

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