Datasheet4U Logo Datasheet4U.com

IPP60R160P6 - N-Channel MOSFET

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤0.16Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP60R160P6 MOSFET Infineon
IPP60R160C6 Power Transistor Infineon Technologies
IPP60R165CP Power Transistor Infineon Technologies
IPP60R120C7 MOSFET Infineon
IPP60R120P7 600V MOSFET Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP60R160C6 N-Channel MOSFET
IPP60R165CP N-Channel MOSFET
IPP60R120C7 N-Channel MOSFET
IPP60R125C6 N-Channel MOSFET
IPP60R125CP N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPP60R160P6，IIPP60R160P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.16Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 23.8 IDM Drain Current-Single Pulsed 68 PD Total Dissipation @TC=25℃ 176 Tj Max.