IPP60R165CP Description
· Ultra low gate charge · High peak current capability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 61 PD Total Dissipation @TC=25℃ 192 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.79mA RDS(on) Drain-Source On-Resistance VGS=10V;.
IPP60R165CP Key Features
- Static drain-source on-resistance
- DESCRIPTION
- Ultra low gate charge
- High peak current capability