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IPP60R165CP - N-Channel MOSFET

General Description

Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 61 PD Total Dissipation @TC=25℃ 192

Key Features

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  • Static drain-source on-resistance: RDS(on) ≤0.165Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor IPP60R165CP，IIPP60R165CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.165Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Ultra low gate charge · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 61 PD Total Dissipation @TC=25℃ 192 Tj Max.