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IPP60R165CP

Manufacturer: Inchange Semiconductor

IPP60R165CP datasheet by Inchange Semiconductor.

IPP60R165CP datasheet preview

IPP60R165CP Datasheet Details

Part number IPP60R165CP
Datasheet IPP60R165CP-INCHANGE.pdf
File Size 240.78 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
IPP60R165CP page 2

IPP60R165CP Overview

· Ultra low gate charge · High peak current capability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 61 PD Total Dissipation @TC=25℃ 192 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.79mA RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP60R165CP Key Features

  • Static drain-source on-resistance
  • DESCRIPTION
  • Ultra low gate charge
  • High peak current capability

IPP60R165CP from other manufacturers

View IPP60R165CP datasheet index

Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo IPP60R165CP Power Transistor Infineon Technologies
Inchange Semiconductor logo - Manufacturer

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