IPP60R180C7 Description
·bines the experience of the leading SJ MOSFET supplier with high class innovation · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 45 PD Total Dissipation @TC=25℃ 68 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.26mA RDS(on) Drain-Source On-Resistance VGS=10V;.
IPP60R180C7 Key Features
- Static drain-source on-resistance
- DESCRIPTION -bines the experience of the leading SJ MOSFET supplier