IPP60R190E6
IPP60R190E6 is N-Channel MOSFET manufactured by Inchange Semiconductor.
isc N-Channel MOSFET Transistor
IPP60R190E6，IIPP60R190E6
- Features
- Static drain-source on-resistance:
RDS(on) ≤0.19Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRIPTION
- Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
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