IPP60R199CP - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPP60R199CP
Manufacturer	INCHANGE
File Size	240.86 KB
Description	N-Channel MOSFET
Datasheet	IPP60R199CP Datasheet
Additional preview pages of the IPP60R199CP datasheet.

IPP60R199CP Product details

Description

Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 16 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 139 T

Features

br>.
Static drain-source on-resistance: RDS(on) ≤0.199Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

IPP60R199CP - Power Transistor (Infineon Technologies)
IPP60R190C6 - Power Transistor (Infineon Technologies)
IPP60R190E6 - Power Transistor (Infineon Technologies)
IPP60R190P6 - MOSFET (Infineon)
IPP60R120C7 - MOSFET (Infineon)
IPP60R120P7 - 600V MOSFET (Infineon)
IPP60R125C6 - MOSFET (Infineon Technologies)
IPP60R125CP - Power Transistor (Infineon Technologies)
IPP60R125P6 - MOSFET (Infineon)
IPP60R160C6 - Power Transistor (Infineon Technologies)

Other Datasheets by INCHANGE

IPP60R190C6 - N-Channel MOSFET
IPP60R190E6 - N-Channel MOSFET
IPP60R190P6 - N-Channel MOSFET
IPP60R120C7 - N-Channel MOSFET
IPP60R125C6 - N-Channel MOSFET
IPP60R125CP - N-Channel MOSFET
IPP60R125P6 - N-Channel MOSFET
IPP60R160C6 - N-Channel MOSFET

Published: Oct 10, 2020 |