IPP60R1K4C6 Overview
·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.2 IDM Drain Current-Single Pulsed 8 PD Total Dissipation @TC=25℃ 28.4 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.09mA RDS(on) Drain-Source On-Resistance VGS=10V;.
IPP60R1K4C6 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while not
