IPP60R1K4C6 Datasheet | Inchange Semiconductor

Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.2 IDM Drain Current-Single Pulsed 8 PD Total Dissipation @TC=25℃ 28.4 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(ch-c) Channel-to-case Rth(ch-a) Channel-to-ambient MAX 4.4 62 UNIT ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP60R1K4C6，IIPP60R1K4C6 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.09mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=1.1A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=1.4A; VGS = 0V MIN TYP MAX UNIT 600 V 2.5 3.5 V 1.4 Ω 0.1 μA 1 μA 0.9 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.