Datasheet4U Logo Datasheet4U.com

IPP60R280C6 - N-Channel MOSFET

General Description

Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.8 IDM Drain Current-Single Pulsed 4

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤0.28Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP60R280C6 MOSFET Infineon Technologies
IPP60R280CFD7 MOSFET Infineon
IPP60R280E6 MOSFET Infineon Technologies
IPP60R280P6 MOSFET Infineon
IPP60R280P7 MOSFET Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP60R280CFD7 N-Channel MOSFET
IPP60R280E6 N-Channel MOSFET
IPP60R280P6 N-Channel MOSFET
IPP60R280P7 N-Channel MOSFET
IPP60R230P6 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPP60R280C6，IIPP60R280C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.8 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 104 Tj Max.