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IPP60R299CP

Manufacturer: Inchange Semiconductor

IPP60R299CP datasheet by Inchange Semiconductor.

IPP60R299CP datasheet preview

IPP60R299CP Datasheet Details

Part number IPP60R299CP
Datasheet IPP60R299CP-INCHANGE.pdf
File Size 240.96 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
IPP60R299CP page 2

IPP60R299CP Overview

·Ultra low gate charge ·High peak current capability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 34 PD Total Dissipation @TC=25℃ 96 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.44mA RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP60R299CP Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Ultra low gate charge -High peak current capability

IPP60R299CP from other manufacturers

View IPP60R299CP datasheet index

Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo IPP60R299CP Power Transistor Infineon Technologies
Inchange Semiconductor logo - Manufacturer

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