IPP60R360P7 Datasheet | Inchange Semiconductor

FEATURES - Static drain-source on-resistance: RDS(on) ≤0.36Ω - Enhancement mode - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRIPTION - bines the benefits of a fast switching SJ MOSFET with excellent ease of use - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.08 UNIT ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE...