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IPP60R380C6

Manufacturer: Inchange Semiconductor
IPP60R380C6 datasheet preview

Datasheet Details

Part number IPP60R380C6
Datasheet IPP60R380C6-INCHANGE.pdf
File Size 241.13 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
IPP60R380C6 page 2

IPP60R380C6 Overview

·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10.6 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 83 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.32mA RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP60R380C6 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Provide all benefits of a fast switching super junction MOS while not

IPP60R380C6 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo IPP60R380C6 MOSFET Infineon Technologies
Inchange Semiconductor logo - Manufacturer

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