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IPP60R600P6 - N-Channel MOSFET

Description

Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 18

Features

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  • Static drain-source on-resistance: RDS(on) ≤0.6Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPP60R600P6
Manufacturer INCHANGE
File Size 240.66 KB
Description N-Channel MOSFET
Datasheet download datasheet IPP60R600P6 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPP60R600P6，IIPP60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 63 Tj Max.
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