Datasheet Details
| Part number | IPP60R600P6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.66 KB |
| Description | N-Channel MOSFET |
| Download | IPP60R600P6 Download (PDF) |
|
|
| Part number | IPP60R600P6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.66 KB |
| Description | N-Channel MOSFET |
| Download | IPP60R600P6 Download (PDF) |
|
|
|
·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 63 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP60R600P6，IIPP60R600P6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
isc N-Channel MOSFET Transistor IPP60R600P6，IIPP60R600P6 ·.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPP60R600P6 | MOSFET | Infineon |
| Part Number | Description |
|---|---|
| IPP60R600P7 | N-Channel MOSFET |
| IPP60R600C6 | N-Channel MOSFET |
| IPP60R600CP | N-Channel MOSFET |
| IPP60R600E6 | N-Channel MOSFET |
| IPP60R040C7 | N-Channel MOSFET |
| IPP60R060C7 | N-Channel MOSFET |
| IPP60R060P7 | N-Channel MOSFET |
| IPP60R070CFD7 | N-Channel MOSFET |
| IPP60R074C6 | N-Channel MOSFET |
| IPP60R080P7 | N-Channel MOSFET |