Datasheet4U Logo Datasheet4U.com

IPP65R099C6 - N-Channel MOSFET

General Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 38 IDM Drain Current-Single Pulsed 115 PD Tot

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤0.099Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP65R099C6 MOSFET Infineon
IPP65R099CFD7A MOSFET Infineon
IPP65R095C7 MOSFET Infineon
IPP65R045C7 MOSFET Infineon
IPP65R065C7 MOSFET Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP65R095C7 N-Channel MOSFET
IPP65R045C7 N-Channel MOSFET
IPP65R065C7 N-Channel MOSFET
IPP65R074C6 N-Channel MOSFET
IPP65R110CFD N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPP65R099C6，IIPP65R099C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 38 IDM Drain Current-Single Pulsed 115 PD Total Dissipation @TC=25℃ 278 Tj Max.