IPP65R110CFD Description
·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31.2 IDM Drain Current-Single Pulsed 99.6 PD Total Dissipation @TC=25℃ 277.8 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1.3mA RDS(on) Drain-Source On-Resistance...
IPP65R110CFD Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while offering