IPP65R190C7 Description
·Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID...
IPP65R190C7 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching super junction MOSFET