Datasheet Details
| Part number | IPP65R420CFD |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.37 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPP65R420CFD-INCHANGE.pdf |
|
|
Overview: isc N-Channel MOSFET Transistor IPP65R420CFD，IIPP65R420CFD ·.
| Part number | IPP65R420CFD |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.37 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPP65R420CFD-INCHANGE.pdf |
|
|
|
·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 8.7 IDM Drain Current-Single Pulsed 27 PD Total Dissipation @TC=25℃ 83.3 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.5 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R420CFD，IIPP65R420CFD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPP65R420CFD | Power Transistor | Infineon Technologies |
| Part Number | Description |
|---|---|
| IPP65R045C7 | N-Channel MOSFET |
| IPP65R065C7 | N-Channel MOSFET |
| IPP65R074C6 | N-Channel MOSFET |
| IPP65R095C7 | N-Channel MOSFET |
| IPP65R099C6 | N-Channel MOSFET |
| IPP65R110CFD | N-Channel MOSFET |
| IPP65R150CFD | N-Channel MOSFET |
| IPP65R190C6 | N-Channel MOSFET |
| IPP65R190C7 | N-Channel MOSFET |
| IPP65R190CFD | N-Channel MOSFET |