IPP65R600C6 Overview
·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 63 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.21mA RDS(on) Drain-Source On-Resistance VGS=10V;.
IPP65R600C6 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while not
