Inchange Semiconductor IPP65R600E6
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | IPP65R600E6 |
|---|---|
| Datasheet | IPP65R600E6 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on) ≤0.6Ω●Enhancement mode
●Fast Switching Speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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DESCRIPTION
●Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.0 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R600E6，IIPP65R600E6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown...