IPP65R660CFD Overview
·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 17 PD Total Dissipation @TC=25℃ 62.5 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.2mA RDS(on) Drain-Source On-Resistance VGS=10V;.
IPP65R660CFD Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while offering
