IPW50R190CE
Overview
- Static drain-source on-resistance: RDS(on)≤190mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Fast switching
| Part | IPW50R190CE |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 237.67 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPW50R190CE | Infineon | MOSFET |
| IPW50R199CP | Infineon | Power Transistor |