Download IPW60R041C6 Datasheet PDF
IPW60R041C6 page 2
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Datasheet Summary

isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6 - Features - Static drain-source on-resistance: RDS(on)≤41mΩ - Enhancement mode: - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Fast Switching -...