Datasheet Summary
isc N-Channel MOSFET Transistor
IPW60R041C6 IIPW60R041C6
- Features
- Static drain-source on-resistance:
RDS(on)≤41mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Fast Switching
-...