IPW60R250CP
Key Features
- Static drain-source on-resistance: RDS(on)≤250mΩ
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- High peak current capability
- Part: IPW60R250CP
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 238.09 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IPW60R250CP | Infineon | Power Transistor |