IPW60R280P6 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤280mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPW60R280P6
Manufacturer	INCHANGE
File Size	238.54 KB
Description	N-Channel MOSFET
Datasheet	IPW60R280P6 Datasheet
Additional preview pages of the IPW60R280P6 datasheet.

📁 Similar Datasheet

IPW60R280P6 - MOSFET (Infineon)
IPW60R280C6 - MOSFET (Infineon Technologies)
IPW60R280E6 - Power Transistor (Infineon Technologies)
IPW60R230P6 - MOSFET (Infineon)
IPW60R250CP - Power Transistor (Infineon Technologies)
IPW60R299CP - CoolMOS Power Transistor (Infineon Technologies)
IPW60R016CM8 - MOSFET (Infineon)
IPW60R017C7 - MOSFET (Infineon)
IPW60R024CM8 - 600V CM8 Power Transistor (Infineon)
IPW60R024P7 - Power Transistor (Infineon)

Other Datasheets by INCHANGE

IPW60R280C6 - N-Channel MOSFET
IPW60R280E6 - N-Channel MOSFET
IPW60R250CP - N-Channel MOSFET
IPW60R299CP - N-Channel MOSFET
IPW60R040C7 - N-Channel MOSFET
IPW60R041C6 - N-Channel MOSFET
IPW60R041P6 - N-Channel MOSFET
IPW60R045CP - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R280P6 IIPW60R280P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.8 IDM Drain Current-Single Pulsed 39 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.

Published: Oct 2, 2020 |