IPW60R330P6
Key Features
- Static drain-source on-resistance: RDS(on)≤330mΩ
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Fast switching
- Part: IPW60R330P6
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 238.18 KB