Inchange Semiconductor IRF034
N-Channel MOSFET Transistor
DESCRIPTION
●Drain Current ID=25A@ TC=25℃●Drain Source Voltage- : VDSS= 60V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max)
●Simple Drive Requirements
APPLICATIONS
●Switching power supplies●Motor controls,Inverters and Choppers
●Audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 60 ±20 V V Drain Current-continuous@ TC=25℃ 25 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 30 ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=1mA VGS(TH) Ga...