IRF100B201 - N-Channel MOSFET

Inchange Semiconductor

Key Features

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Static drain-source on-resistance: RDS(on) ≤4.2mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRF100B201 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRF100B201
Manufacturer	Inchange Semiconductor
File Size	241.32 KB
Description	N-Channel MOSFET
Datasheet	IRF100B201 Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF100B201， IIRF100B201 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 192 IDM Drain Current-Single Pulsed 690 PD Total Dissipation @TC=25℃ 441 Tj Max.