Inchange Semiconductor IRF120
N-Channel MOSFET Transistor
| Part No. | IRF120 |
|---|---|
| Datasheet | IRF120 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID=8A@ TC=25℃●Drain Source Voltage- : VDSS= 100V(Min)
●Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max)
●Nanosecond Switching Speeds
APPLICATIONS
●Switching power supplies●Motor controls,Inverters and Choppers
●Audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 100 ±20 V V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 30 ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH)...