IRF1503
FEATURES
- Static drain-source on-resistance:
RDS(on) ≤3.3mΩ
- Enhancement mode:
Vth =2.0 to 4.0V (VDS = 10 V, ID=250μA)
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- reliable device for use in a wide variety of applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
Gate-Source Voltage
±20
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.75 62
UNIT ℃/W ℃/W isc website：.iscsemi.cn...
