Download IRF200B211 Datasheet PDF
IRF200B211 page 2
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Datasheet Summary

isc N-Channel MOSFET Transistor IRF200B211,IIRF200B211 - Features - Static drain-source on-resistance: RDS(on) ≤170mΩ - Enhancement mode - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Synchronous rectifier applications - Resonant mode power supplies - DC/DC and AC/DC converters -...