Datasheet4U Logo Datasheet4U.com

IRF200B211 - N-Channel MOSFET

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤170mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF200B211 Power MOSFET International Rectifier
IRF200 HIGH POWER WIRE WOUND RESISTOR ETC
IRF200P222 MOSFET Infineon
IRF200P223 MOSFET Infineon
IRF200S234 IR MOSFET Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF200P223 N-Channel MOSFET
IRF200S234 N-Channel MOSFET
IRF2204 N-Channel MOSFET
IRF2204S N-Channel MOSFET
IRF250P224 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IRF200B211，IIRF200B211 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤170mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous rectifier applications ·Resonant mode power supplies ·DC/DC and AC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 34 PD Total Dissipation @TC=25℃ 80 Tj Max.