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IRF200P223 - N-Channel MOSFET

Key Features

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  • Static drain-source on-resistance: RDS(on)≤11.5mΩ.
  • Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223，IIRF200P223 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11.5mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 313 Tj Max.