Datasheet Summary
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223，IIRF200P223
- Features
- Static drain-source on-resistance:
RDS(on)≤11.5mΩ
- Enhancement mode:
Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- OR-ring and redundant power switches
-...
