Inchange Semiconductor IRF236
N-Channel MOSFET Transistor
| Part No. | IRF236 |
|---|---|
| Datasheet | IRF236 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID=8.1A@ TC=25℃●Drain Source Voltage- : VDSS= 275V(Min)
●Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max)
●Nanosecond Switching speeds
APPLICATIONS
●Switching power supplies●Switching converters,motor driver,relay driver
●Drivers for high-power bipolar switching transistors
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 275 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 8.1 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 80 ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;...