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IRF241 Datasheet PDF

Inchange Semiconductor IRF241

N-Channel MOSFET Transistor

Part No. IRF241
Datasheet IRF241 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRF241 datasheet page 1 preview

DESCRIPTION

●Drain Current ID=18A@ TC=25℃
●Drain Source Voltage : VDSS= 150V(Min)
●Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max)

APPLICATIONS

●Switching power supplies
●Switching converters,motor driver,relay driver
●Audio amplifier and servo motors

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 18 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS

(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; I...
IRF241 page 2 preview