IRF250P225 - N-Channel MOSFET

Inchange Semiconductor

Key Features

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Static drain-source on-resistance: RDS(on)≤22mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRF250P225 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRF250P225
Manufacturer	Inchange Semiconductor
File Size	237.76 KB
Description	N-Channel MOSFET
Datasheet	IRF250P225 Datasheet

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225，IIRF250P225 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 69 IDM Drain Current-Single Pulsed 276 PD Total Dissipation @TC=25℃ 313 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.