IRF250P225
Overview
- Static drain-source on-resistance: RDS(on)≤22mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- OR-ring and redundant power switches
| Part | IRF250P225 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 237.76 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF250P225 | Infineon | MOSFET |
| IRF250P224 | Infineon | MOSFET |