IRF2804S
DESCRIPTION
- Static drain-source on-resistance:
RDS(on) ≤6mΩ@VGS= 10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±20
Drain Current-continuous@TC=100℃
Pulse Drain Current
Ptot
Total Dissipation
Tj
Max. Operating Junction Temperature
℃
Tstg
Storage Temperature Range
-55~175 ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.45 ℃/W
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