IRF2907Z - N-Channel MOSFET

Features

br>.
Static drain-source on-resistance: RDS(on) ≤4.5mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IRF2907Z
Manufacturer	INCHANGE
File Size	241.91 KB
Description	N-Channel MOSFET
Datasheet	IRF2907Z Datasheet
Additional preview pages of the IRF2907Z datasheet.

📁 Similar Datasheet

IRF2907Z - AUTOMOTIVE MOSFET (International Rectifier)
IRF2907ZL - AUTOMOTIVE MOSFET (International Rectifier)
IRF2907ZLPbF - (IRF2907ZxPbF) HEXFET Power MOSFET (International Rectifier)
IRF2907ZLPbF - Power MOSFET (International Rectifier)
IRF2907ZPbF - Power MOSFET (International Rectifier)
IRF2907ZS - AUTOMOTIVE MOSFET (International Rectifier)
IRF2907ZS-7PPbF - HEXFET Power MOSFET (International Rectifier)
IRF2907ZSPbF - Power MOSFET (International Rectifier)
IRF2907LPbF - (IRF2907ZxPbF) HEXFET Power MOSFET (International Rectifier)
IRF2907SLPbF - (IRF2907ZxPbF) HEXFET Power MOSFET (International Rectifier)

Other Datasheets by INCHANGE

IRF2907ZS - N-Channel MOSFET
IRF2903Z - N-Channel MOSFET
IRF2903ZS - N-Channel MOSFET
IRF200B211 - N-Channel MOSFET
IRF200P223 - N-Channel MOSFET
IRF200S234 - N-Channel MOSFET
IRF2204 - N-Channel MOSFET
IRF2204S - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2907Z， IIRF2907Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 680 PD Total Dissipation @TC=25℃ 330 Tj Max.

Published: Oct 3, 2020 |