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IRF320 Datasheet PDF

Inchange Semiconductor IRF320

N-Channel MOSFET Transistor

Part No. IRF320
Datasheet IRF320 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRF320 datasheet page 1 preview

DESCRIPTION

●Drain Current ID=3.3A@ TC=25℃
●Drain Source Voltage : VDSS= 400V(Min)
●Static Drain-Source On-Resistance : RDS(on) =1.8Ω(Max)

APPLICATIONS

●Switching power supplies
●Switching converters,motor driver,relay driver

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 400 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3.3 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 30 ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF320
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ELECTRICAL CHARACTERISTICS

(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage VGS=0; ID=250µA VDS= VGS; I...
IRF320 page 2 preview